lx5501b p roduction d ata s heet microsemi integrated products division 11861 western avenue, garden grove, ca. 92841, 714-898-8121, fax: 714-893-2570 page 1 copyright ? 2000 rev. 1.0, 2004-01-06 www. microsemi . com ingap hbt gain block tm ? description the lx5501b is a low cost, broadband rfic amplifier that has been manufactured with an ingap/gaas heterojunction bipolar transistor (hbt) process (mocvd). designed as an easily cascadable 50- ohm internally matched gain block, the lx5501b can be used for if and rf amplification in wireless / wired voice and data communication products and broadband test equipment operating up to 6 ghz. the amplifier is available in a plastic 5- lead sot-23 package. key features ? advanced ingap hbt ? dc to 6 ghz operation ? single supply ? low idle current (10 - 35 ma) ? small signal gain ~ 9 db at 6 ghz ? p1db ~ 8 dbm at 6 ghz ? sot-23 package applications ? pa driver for wlan and cordless phones ? vco buffer ? low current, high gain cascaded amplifiers product highlight ? input and output matched to 50 ohms for ease of cascading. ? cascaded gain blocks can be individually biased for the lowest supply current. package order info se plastic sot-23 5 pin rohs compliant / pb-free transition dc: 0503 -40 to +85 c LX5501BSE note: available in tape & reel. append the letters ?tr? to the part number. (i.e. LX5501BSE-tr) l l x x 5 5 5 5 0 0 1 1 b b
lx5501b p roduction d ata s heet microsemi integrated products division 11861 western avenue, garden grove, ca. 92841, 714-898-8121, fax: 714-893-2570 page 2 copyright ? 2000 rev. 1.0, 2004-01-06 www. microsemi . com ingap hbt gain block tm ? absolute maximum ratings dc supply voltage ............................................................................................6v collector current ........................................................................................100ma rf input power........................................................................................... 10dbm operating temperature range ...........................................................-40 to +85 c storage temperat ure range...........................................................-65 c to 150 c peak package solder reflow temp. (40 seconds max. exposure).. 260c (+0, -5) note: exceeding these ratings could cause damage to the device. all voltages are with respect to ground. currents are positive into, negative out of specified terminal . thermal data se plastic sot-23 5-pin thermal resistance - junction to c ase , jc 138 c/w thermal resistance - junction to a mbient , ja 245 c/w junction temperature calculation: t j = t a + (p d x ja ). the ja numbers are guidelines for the thermal performan ce of the device/pc-board system. all of the above assume no ambient airflow. package pin out rf output / vcc gnd gnd rf input gnd 1 2 34 5 se p ackage (top view) rohs / pb-free 100% matte tin lead finish functional pin description pin no. description 1 ground 2 ground 3 rf input 4 ground 5 rf output/vcc supply recommended operating conditions lx5501b parameter symbol min typ max units supply voltage (with appropriate external resistor) vcc 2.7 6 v quiescent current (no rf input) icq 10 40 ma electrical characteristics conditions: +25 c lx5501b parameter symbol test conditions min typ max units ` general specifications (fig 1. test circuit) small signal gain s21 frequency = 6 ghz 9 db p1db compression p1db frequency = 6 ghz 8 dbm input return loss s11 frequency = 4.9-6 ghz -10 db output return loss s22 frequency = 4.9-6 ghz -9 db isolation s12 frequency = 4.9-6 ghz -20 db harmonics frequency = 6 ghz, pout = p1db -30 dbc quiescent current icq 23 ma p p a a c c k k a a g g e e d d a a t t a a
lx5501b p roduction d ata s heet microsemi integrated products division 11861 western avenue, garden grove, ca. 92841, 714-898-8121, fax: 714-893-2570 page 3 copyright ? 2000 rev. 1.0, 2004-01-06 www. microsemi . com ingap hbt gain block tm ? figure 1: test circuit for 4 to 6 ghz c1 c2 l1 c3 c4 vcc out in lx5501b 35 1 2 4 r ext location value comment c1,c2 2pf dc block (0402) c3 10pf rf decoupling (0402) c4 0.1f lf decoupling (0402) l1 3.3nh rf choke (0402) r ext 5 ohms bias setting resistor (0402) vcc 2.85v supply voltage quiescent current vs bias voltage rext vs supply voltage 0 5 10 15 20 25 30 35 40 45 50 2.35 2.45 2.55 2.65 2.75 2.85 pin 5 bias voltage - volts icq, quiescent current - ma 0 10 20 30 40 50 60 70 80 90 2.8 3.2 3.6 4 4.4 4.8 5.2 5.6 6 supply voltage - volts rext - ohms recommended r ext value versus maximum supply voltage a a p p p p l l i i c c a a t t i i o o n n s s
lx5501b p roduction d ata s heet microsemi integrated products division 11861 western avenue, garden grove, ca. 92841, 714-898-8121, fax: 714-893-2570 page 4 copyright ? 2000 rev. 1.0, 2004-01-06 www. microsemi . com ingap hbt gain block tm ? p1db, gain vs vcc s parameter (frequency = 6 ghz, rext = 20 o hms ) 0 2 4 6 8 10 12 3 3.1 3.2 3.3 3.4 3.5 3. 6 supply vo ltage - vo lts gain, p1db - db, dbm gain p1 d b (vcc = 3.3v, rext = 20 ohms) 0 2 4 6 8 10 12 14 22.533.544.555.56 frequency - ghz s21 - db -25 -20 -15 -10 -5 0 s11,s12,s22 - db s21 s11 s12 s22 5.8ghz power sweep (vcc = 3.3v, rext = 20 o hms) -15 -10 -5 0 5 10 15 -25-20 -15-10 -5 0 5 10 input p o wer - db m gain, output power - db, dbm 0 5 10 15 20 25 30 35 40 po ut gain ic c c h h a a r r t t s s
lx5501b p roduction d ata s heet microsemi integrated products division 11861 western avenue, garden grove, ca. 92841, 714-898-8121, fax: 714-893-2570 page 5 copyright ? 2000 rev. 1.0, 2004-01-06 www. microsemi . com ingap hbt gain block tm ? package dimensions se 5 pin plastic sot-23 h g f e a1 j i c k a b d m illimeters i nches dim min max min max a 0.90 1.30 0.035 0.051 a1 0.90 1.45 0.035 0.057 b 0.25 0.50 0.010 0.020 c 0.09 0.20 0.004 0.008 d 2.80 3.10 0.110 0.122 e 1.50 1.75 0.059 0.069 f 0.95 bsc 0.038 bsc g 1.90 bsc 0.075 bsc h 2.60 3.00 0.102 0.118 i 0.35 0.55 0.014 0.022 j 0.00 0.15 0.000 0.006 k 10 max 10 max note: 1. dimensions do not include mold flash or protrusions; these shall not exceed 0. 155mm(.006?) on any side. lead dimension shal l not include solder coverage. m m e e c c h h a a n n i i c c a a l l s s
lx5501b p roduction d ata s heet microsemi integrated products division 11861 western avenue, garden grove, ca. 92841, 714-898-8121, fax: 714-893-2570 page 6 copyright ? 2000 rev. 1.0, 2004-01-06 www. microsemi . com ingap hbt gain block tm ? notes production data ? information contained in this document is proprietary to microsemi and is current as of publication date. this document may not be modified in any way without the express written consent of microsemi. product processing does not necessarily include testing of all parameters. microsemi reserves th e right to change the configuration and performance of the product and to discontinue product at any time. n n o o t t e e s s
|
